mbrs320t3, MBRS330T3, mbrs340t3, mbrs360t3 preferred devices surface mount schottky power rectifier . . . employing the schottky barrier principle in a large area metaltosilicon power diode. stateoftheart geometry features epitaxial construction with oxide passivation and metal overlay contact. ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system. ? small compact surface mountable package with jbend leads ? rectangular package for automated handling ? highly stable oxide passivated junction ? very low forward voltage drop (0.5 volts max @ 3.0 a, t j = 25 c) ? excellent ability to withstand reverse avalanche energy transients ? guardring for stress protection mechanical characteristics: ? case: epoxy, molded ? weight: 217 mg (approximately) ? finish: all external surfaces corrosion resistant and terminal leads are readily solderable ? lead and mounting surface temperature for soldering purposes: 260 c max. for 10 seconds ? shipped in 16 mm tape and reel, 2500 units per reel ? polarity: notch in plastic body indicates cathode lead ? marking: b32, b33, b34, b36 maximum ratings please see the table on the following page device package shipping ordering information smc case 403 plastic mbrs320t3 smc 2500/tape & reel schottky barrier rectifiers 3.0 amperes 20, 30, 40, 60 volts preferred devices are recommended choices for future use and best overall value. MBRS330T3 smc 2500/tape & reel mbrs340t3 smc 2500/tape & reel mbrs360t3 smc 2500/tape & reel marking diagram yww b3x b3x = device code x = 2, 3, 4 or 6 y = year w = work week product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
mbrs320t3, MBRS330T3, mbrs340t3, mbrs360t3 maximum ratings rating symbol mbrs320t3 MBRS330T3 mbrs340t3 mbrs360t3 unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 20 30 40 60 volts average rectified forward current i f(av) 3.0 @ t l = 100 c 4.0 @ t l = 90 c amps nonrepetitive peak surge current (surge applied at rated load conditions halfwave, single phase, 60 hz) i fsm 80 80 80 80 amps operating junction temperature t j 65 to +125 65 to +125 65 to +125 c thermal characteristics thermal resistance e junction to lead r q jl 11 11 11 11 c/w electrical characteristics maximum instantaneous forward voltage (note 1.) (i f = 3.0 a, t j = 25 c) v f 0.50 0.50 0.525 0.740 volts maximum instantaneous reverse current (note 1.) (rated dc voltage, t j = 25 c) (rated dc voltage, t j = 100 c) i r 2.0 20 2.0 20 2.0 20 0.5 20 ma 1. pulse test: pulse width = 300 m s, duty cycle 2.0%. product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
|
